Analogi Tranzistora K2645

Pularmanjupol mp3 free download pc. HA-137A CMOS Compatible Enable/disable. The HA-A1370 Series of quartz crystal oscillators provide enable/disable 3-state CMOS compatible signals for bus connected systems. Supplying Pin 1 of the HA-A1370 units with a logic 0 enables the output on Pin 5.

About product and suppliers: Alibaba.com offers 104 k2645 power transistor products. About 22% of these are integrated circuits, 1% are transistors. A wide variety of k2645 power transistor options are available to you, such as triode transistor, drive ic, and logic ics. There are 24 k2645 power transistor suppliers, mainly located in Asia.

The top supplying country is China (Mainland), which supply 100% of k2645 power transistor respectively. K2645 power transistor products are most popular in North America, Eastern Europe, and South America. You can ensure product safety by selecting from certified suppliers, including 8 with Other, 1 with BRC certification.

MOSFET Cross-Reference Search 2SK2843 Datasheet (PDF) 1.1. Size:411K _toshiba 2SK2843 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2843 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.54? (typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.1.

Size:408K _toshiba 2SK2846 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2846 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 4.2? (typ.) (ON) High forward transfer admittance: Y = 1.7 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 600 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 4.2. Size:417K _toshiba 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2841 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance: RDS (ON) = 0.4? (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100?A (max) (VDS = 400 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 4.3. Size:426K _toshiba 2SK2844 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -?-MOSV) 2SK2844 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain-source ON resistance: R = 16 m? (typ.) DS (ON) High forward transfer admittance: Y = 26 S (typ.) fs Low leakage current: IDSS = 100 µA (max) (V = 30 V) DS Enhancement-mod 4.4. Size:411K _toshiba 2SK2845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2845 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 8.0?

(typ.) High forward transfer admittance: Y = 0.9 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.5. Size:425K _toshiba 2SK2842 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSV) 2SK2842 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 0.4? (typ.) (ON) High forward transfer admittance: Y = 9.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 500 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V 4.6. Size:411K _toshiba 2SK2847 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSIII) 2SK2847 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance: RDS = 1.1? (typ.) (ON) High forward transfer admittance: Y = 7.0 S (typ.) fs Low leakage current: I = 100 µA (max) (V = 720 V) DSS DS Enhancement-mode: Vth = 2.0~4.0 V (V = 10 V, I = 1 mA) 4.7.

Size:43K _sanken-ele 2SK2848 External dimensions 1. FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25?C) (Ta = 25?C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100µA, V = 0V (BR) DSS D GS V 600 V DSS I ±100 nA V = ±30V GSS GS V ±30 V GSS I 100 µA V = 600V, V = 0V DSS DS GS I ±2A D V 2.0 3.0 4.0 V V = 10V, I = 250µA TH DS D I ±8 A D (pulse).